| Name | NaConduction |
| Description |
| As described in the ChannelML file |
| Example showing a channel with different Q10 adjustments for each gate, based on HH Na example |
| Current voltage relationship | ohmic |
| Ion involved in channel |
| The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. |
| na (default Ena = 50 mV)
|
| Default maximum conductance density |
| Note that the conductance density of the channel will be set when it is placed on the cell. |
| Gmax = 120 mS cm-2 |
| Conductance expression |
| Expression giving the actual conductance as a function of time and voltage |
| Gna(v,t) = Gmax
* m(v,t)
3 * h(v,t)
|
| Current due to channel |
| Ionic current through the channel |
| Ina(v,t) =
Gna(v,t) * (v - Ena) |
| Q10 scaling |
| Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature
to be used at a different temperature. |
|
| Q10 adjustment applied to gate: | m |
| Q10_factor: | 3 |
| Experimental temperature (at which rate constants below were determined): | 17 oC |
| Expression for tau at T using tauExp as calculated from rate equations: |
tau(T) = tauExp / 3^((T - 17)/10) |
|
| Q10 scaling |
| Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature
to be used at a different temperature. |
|
| Q10 adjustment applied to gate: | h |
| Q10_factor: | 3.5 |
| Experimental temperature (at which rate constants below were determined): | 17 oC |
| Expression for tau at T using tauExp as calculated from rate equations: |
tau(T) = tauExp / 3.5^((T - 17)/10) |
|
|
Gate: m
The equations below determine the dynamics of gating state m
|
| Instances of gating elements | 3 |
| Closed state | m0 |
| Open state | m (fractional conductance: 1) |
| |
| Transition: alpha from m0 to m |
| Expression | alpha(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B)) (exp_linear) |
| Parameter values |
A = 1 ms-1
B = 10 mV
V1/2 = -40 mV
|
| Substituted |
|
alpha(v) =
|
1 * (
v - (-40)) / 10
|
|
1- e -((
v - (-40)) / 10)
|
|
| |
| Transition: beta from m to m0 |
| Expression | beta(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 4 ms-1
B = -18 mV
V1/2 = -65 mV
|
| Substituted |
beta(v) =
4 * e
(v - (-65))/-18 |
|
Gate: h
The equations below determine the dynamics of gating state h
|
| Instances of gating elements | 1 |
| Closed state | h0 |
| Open state | h (fractional conductance: 1) |
| |
| Transition: alpha from h0 to h |
| Expression | alpha(v) = A*exp((v-V1/2)/B) (exponential) |
| Parameter values |
A = 0.07 ms-1
B = -20 mV
V1/2 = -65 mV
|
| Substituted |
alpha(v) =
0.07 * e
(v - (-65))/-20 |
| |
| Transition: beta from h to h0 |
| Expression | beta(v) = A / (1 + exp((v-V1/2)/B)) (sigmoid) |
| Parameter values |
A = 1 ms-1
B = -10 mV
V1/2 = -35 mV
|
| Substituted |
|
beta(v) =
|
1
|
|
1+ e (
v - (-35))/-10
|
|
